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Ge-on-Si laser operating at room temperature.

Jifeng Liu1, Xiaochen Sun, Rodolfo Camacho-Aguilera

  • 1MIT Microphotonics Center, Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA. jfliu01@mit.edu

Optics Letters
|March 3, 2010
PubMed
Summary

Researchers achieved room-temperature lasing in germanium-on-silicon (Ge-on-Si) using an edge-emitting waveguide. This breakthrough enables efficient silicon photonic integration for lasers.

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Area of Science:

  • Photonics and Materials Science
  • Semiconductor Physics
  • Optoelectronics

Background:

  • Monolithic lasers on silicon (Si) are crucial for large-scale electronic-photonic integration.
  • Germanium (Ge) offers pseudodirect gap properties and compatibility with silicon complementary metal-oxide-semiconductor (Si-CMOS) technology.
  • Previous work demonstrated room-temperature photoluminescence, electroluminescence, and optical gain in band-engineered Ge-on-Si.

Purpose of the Study:

  • To report the first experimental observation of lasing from the direct gap transition of germanium-on-silicon (Ge-on-Si) at room temperature.
  • To utilize an edge-emitting waveguide device for demonstrating Ge-on-Si lasing.
  • To characterize the lasing properties, including emission spectrum, polarization, and threshold behavior.

Main Methods:

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  • Fabrication of band-engineered Ge-on-Si using tensile strain and n-type doping.
  • Utilizing an edge-emitting waveguide device structure.
  • Experimental measurement of photoluminescence, electroluminescence, optical gain, emission spectrum, polarization, and threshold characteristics.

Main Results:

  • First experimental observation of room-temperature lasing from the direct gap transition of Ge-on-Si.
  • Observed emission gain spectrum in the 1590-1610 nm range.
  • Demonstrated line narrowing and polarization evolution from mixed TE/TM to predominantly TE with increasing gain.
  • Confirmed clear threshold behavior indicative of lasing.

Conclusions:

  • Successful demonstration of room-temperature lasing in Ge-on-Si edge-emitting waveguide devices.
  • This achievement is a significant step towards integrated silicon photonics.
  • The results pave the way for high-volume manufacturing of on-chip lasers compatible with Si-CMOS technology.