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Updated: Jun 15, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
12:57

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

Optically pumped semiconductor quantum dot disk laser operating at 1180 nm.

Jussi Rautiainen1, Igor Krestnikov, Mantas Butkus

  • 1Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720 Tampere, Finland. jussi.rautiainen@tut.fi

Optics Letters
|March 3, 2010
PubMed
Summary

We developed a new optically pumped semiconductor disk laser utilizing InGaAs quantum dots. This laser achieves 1.75 W of single-transverse-mode output at 1180 nm with a circular beam shape.

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Area of Science:

  • Optics
  • Materials Science
  • Semiconductor Physics

Background:

  • Semiconductor disk lasers (SDLs) offer unique advantages for high-power laser generation.
  • Efficient heat dissipation remains a critical challenge for scaling SDL performance.
  • Quantum dot active regions provide broad gain bandwidth and low transparency power.

Purpose of the Study:

  • To demonstrate an optically pumped semiconductor disk laser with high output power and good beam quality.
  • To investigate the performance of InGaAs quantum dots as the gain medium in an SDL architecture.
  • To assess the effectiveness of a diamond heat spreader in managing thermal load.

Main Methods:

  • Fabrication of a 39-layer Stranski-Krastanov InGaAs quantum dot structure grown epitaxially on a GaAs/AlAs distributed Bragg reflector.

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Last Updated: Jun 15, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
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Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

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  • Integration of the quantum dot gain structure with an intracavity diamond crystal heat spreader.
  • Optical pumping of the laser structure and characterization of output power, beam quality, and wavelength.
  • Main Results:

    • Achieved a single-transverse-mode output power of 1.75 W.
    • Obtained a circular beam shape with a beam quality factor M(2)<1.2.
    • Operated the laser at a wavelength of 1180 nm in a disk laser geometry.

    Conclusions:

    • Optically pumped semiconductor disk lasers using InGaAs quantum dots are a viable technology for high-power laser applications.
    • The use of a diamond heat spreader effectively manages thermal dissipation, enabling high output power.
    • The demonstrated performance highlights the potential of quantum dot gain media for advanced laser systems.