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Updated: Jun 15, 2026

Investigating the Potential of Singly Curved Thin Piezoelectric Transducers for Energy Harvesting and Structural Health Monitoring

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Review: Semiconductor Piezoresistance for Microsystems.

A Alvin Barlian¹, Woo-Tae Park, Joseph R Mallon

¹Stanford University, Mechanical Engineering, Stanford, CA 94305 USA.

Proceedings of the IEEE. Institute of Electrical and Electronics Engineers

|September 28, 2011

Summary

This summary is machine-generated.

Piezoresistive sensors, leveraging the effect of stress on silicon, have driven microelectromechanical systems (MEMS) development. This review covers their history, physics, fabrication, and design for engineers.

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Area of Science:

Materials Science
Electrical Engineering
Nanotechnology

Background:

Piezoresistive sensors are foundational micromachined silicon devices.
Their development spurred advancements in microelectromechanical systems (MEMS).
The piezoresistive effect in silicon and germanium was established in 1954.

Purpose of the Study:

To provide a comprehensive review of integrated piezoresistor technology.
To introduce the physics of piezoresistivity.
To offer guidance on process, material selection, and design.

Main Methods:

Historical review of piezoresistive sensors.
Discussion of the physics and fabrication techniques.
Analysis of electrical noise, device examples, and alternative materials.

Main Results:

Extensive reporting on microscale piezoresistive devices like strain gauges, pressure sensors, and accelerometers.
Commercial success of various piezoresistive sensor applications.
Identification of key design considerations and alternative materials.

Conclusions:

Piezoresistor technology is crucial for high-performance sensor development.
Understanding the physics and fabrication is essential for device engineers.
This review serves as a valuable resource for researchers and engineers in the field.