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Published on: August 12, 2013
Field enhanced charge carrier reconfiguration in electronic and ionic coupled dynamic polymer resistive memory
Jun Hui Zhao1, Douglas J Thomson, Matt Pilapil
1Department of Electrical and Computer Engineering, University of Manitoba, Winnipeg, MB, Canada.
Researchers demonstrated dynamic resistive memory devices using conjugated polymers. Increasing the applied electric field significantly speeds up data writing in these polypyrrole-based memory devices, showing promise for future scaling.
Area of Science:
- Materials Science
- Electrical Engineering
- Nanotechnology
Background:
- Conjugated polymer composites offer potential for advanced electronic devices.
- Dynamic resistive memory relies on ion migration for data storage.
- Understanding ion dynamics is crucial for optimizing device performance.
Purpose of the Study:
- Investigate the dynamics of conjugated polymer-based resistive memory devices.
- Determine the effect of applied electric fields on data writing speed.
- Develop a model to interpret device behavior.
Main Methods:
- Fabrication and testing of dynamic resistive memory devices using polypyrrole (PPy) and dodecylbenzenesulfonate (DBS(-)) composite.
- Experimental measurement of transient conducting behaviors under varying electric fields.
- Application of a conductance model incorporating space charge limited current and ion reconfiguration.
Main Results:
- Increasing applied electric fields dramatically enhances the rate of information writing.
- A 50-fold decrease in write time was observed by increasing write potential from 2.5 V to 5.5 V in 500 nm devices.
- Transient current states, controlled by pulse magnitude and width, are used for digital state storage.
Conclusions:
- The studied conjugated polymer composite memory devices exhibit favorable scaling properties.
- Write times are expected to decrease rapidly with increasing ion driving fields and decreasing device size.
- Field-driven ion migration is a key mechanism for high-speed data writing in these devices.
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