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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

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Predicted crystal structures of tetramethylsilane and tetramethylgermane and an experimental low-temperature

Alexandra K Wolf1, Jürgen Glinnemann, Lothar Fink

  • 1Goethe University, Institute of Inorganic and Analytical Chemistry, Max-von-Laue-Strasse 7, 60438 Frankfurt am Main, Germany.

Acta Crystallographica. Section B, Structural Science
|March 23, 2010
PubMed

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