ZnO nanowire-based UV photodetector
Chien-Yuan Lu1, Sheng-Po Chang, Shoou-Jinn Chang
1Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan.
A novel zinc oxide (ZnO) nanowire ultraviolet (UV) photodetector was fabricated. The device showed a significant current increase under UV light, demonstrating its potential for UV detection applications.
Area of Science:
- Materials Science
- Nanotechnology
- Optoelectronics
Background:
- Zinc oxide (ZnO) nanowires are promising materials for optoelectronic devices due to their unique properties.
- Developing efficient ultraviolet (UV) photodetectors is crucial for various applications, including environmental monitoring and imaging.
Purpose of the Study:
- To propose and fabricate a ZnO nanowire-based UV photodetector.
- To investigate the performance of the fabricated photodetector under UV irradiation.
Main Methods:
- Vertically aligned ZnO nanowires were grown.
- Interdigitated gold (Au) film electrodes were deposited on the ZnO nanowires.
- Electrical characteristics and photoresponse were measured under UV light.
Main Results:
- The fabricated device exhibited good ohmic contact between the Au electrodes and ZnO nanowires.
- The detector current increased by over 2.5 times upon UV irradiation.
- The time constants for turn-on and turn-off transients were measured as 3.125 ms and 36.92 ms, respectively.
Conclusions:
- The ZnO nanowire-based photodetector demonstrates efficient UV detection capabilities.
- The device exhibits fast response times, suitable for dynamic UV sensing.
- This work highlights the potential of ZnO nanowires in developing advanced photodetector technologies.
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