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Updated: Jun 14, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Transmission electron microscope observation of interface structures of graphene on 6H-SiC
Wataru Norimatsu1, Michiko Kusunoki
1EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya-shi, Aichi-ken, 464-8603, Japan.
Abstract:
High-resolution transmission electron microscopic cross-sectional observations of graphene-on-SiC(0001) were carried out to directly observe the interface structure. A first principles calculation allowed us to understand the interface structures and their electronic states. Our observations revealed a metastable transitional interface structure formed by decomposition of a single SiC bilayer as well as complete honeycomb graphene formed by the decomposition of three SiC bilayers. The calculations further showed that the differences in the interface structures should strongly influence the electronic states, producing either metallic or semiconducting behavior. These results may help to resolve the controversy over the electronic states of graphene-on-SiC, and promote more accurate band-gap engineering via surface decomposition.

