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Updated: Jun 14, 2026

Seedless Growth of Bismuth Nanowire Array via Vacuum Thermal Evaporation
Published on: December 21, 2015
UV emission from patterned growth of ZnO nanowires
Manoj K Singh1, E Titus, J Gracio
1Center for Mechanical Technology and Automation, Universidade de Aveiro, Campus de Santiago, 3810-193 Aveiro, Portugal.
Abstract:
Patterned and high-density ZnO nanowires were fabricated on a large area P type silicon (100) through Vapor-Liquid-Solid approach. An aluminium mask was used for the patterned deposition of gold catalyst. ZnO nanowires grown with the aid of gold catalyst were well aligned and had dimensions of 30-80 nm diameter and 0.5-2 microm length. The perfect crystallinity and orientation [0002] of the nanowires were confirmed by high-resolution transmission electron microscopy (HR-TEM). Low-temperature photoluminescence spectrum exhibits an intensive UV emission at approximately 380 nm and a weak broad green band at approximately 530 nm which is detected under an optical excitation of 325 nm wavelength of He-Cd laser. These arrays of ZnO nanowires could have myriad applications in nanolasers, optoelectronic devices and optical interconnects.

