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Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
Published on: April 21, 2016
Nanowire photodetectors.
Cesare Soci1, Arthur Zhang, Xin-Yu Bao
1Department of Electrical and Computer Engineering, Jacobs School of Engineering, University of California, San Diego, 9500 Gilman Drive, La Jolla, California 92093-0407, USA.
Journal of Nanoscience and Nanotechnology
|April 2, 2010
Summary
Recent research clarifies the mechanism behind high photosensitivity in nanowire photodetectors. This advancement enables novel applications like single-photon detectors and intrachip interconnects.
Area of Science:
- Nanotechnology
- Optoelectronics
- Materials Science
Background:
- Nanowires and their unique structures are emerging as key components in photodetector technology.
- Despite extensive research, the underlying mechanisms for high photosensitivity and photoconductive gain in nanostructures were recently elucidated.
- Novel device architectures are continuously being developed for single nanowire devices.
Purpose of the Study:
- To review general concepts of nanowire photodetectors.
- To detail the physical phenomena in nanowire photoconductors and phototransistors.
- To provide an outlook on future applications of semiconductor nanowire photoconductors.
Main Methods:
- Review of existing literature on nanowire photodetectors.
- Detailed description of physical phenomena in nanowire-based devices.
- Presentation of experimental results from the authors' groups.
Main Results:
- Recent elucidation of the mechanism responsible for high photosensitivity and photoconductive gain in high aspect ratio nanostructures.
- Development and study of novel device architectures integrated within single nanowire devices.
- Experimental validation of physical phenomena in nanowire photoconductors and phototransistors.
Conclusions:
- The understanding of nanowire photodetector mechanisms has significantly advanced.
- Semiconductor nanowire photoconductors show promise for future applications.
- Future directions include intrachip interconnects, single-photon detectors, and image sensors.

