Polythiophenes containing in-chain cobaltabisdicarbollide centers

New cobalt(III) bis(dicarbollide) complexes covalently linked to two 2-oligothienyl units have been synthesized and electropolymerized in acetonitrile electrolyte in order to produce the corresponding polythiophene films containing in-chain metallic centers. The polymer films electrogenerated from the bithienyl (4b) and terthienyl (4c) derivatives display redox processes attributed to the Co(III)/Co(II) couple at ca. -1.1 V vs SCE and to the p-doping/undoping of the expected quaterthienyl and sexithienyl segments at ca. 0.8 V vs SCE. In contrast, the anodic oxidation of the thienyl (4a) derivative leads to passivation of the electrode surface. As the length of the oligothiophene substituents increases, the metallic and dicarbollide cage carbon atoms contributions in the HOMO decrease dramatically so that the highest occupied frontier orbitals of 4b and 4c can be considered as almost purely oligothiophene-based. From further UV-vis spectroscopy analysis, it is demonstrated that the polymer incorporating the sexithienyl segments is more conjugated than that with the quaterthienyl segments as the absorption maximum for the interband pi-pi* transition was observed at 410 and 448 nm for poly(4b) and poly(4c) respectively. Furthermore, these polymers display a more extended degree of conjugation than the parent oligothiophenes. Such features indicate a significant electronic delocalization through the cobaltabisdicarbollide moiety. Their conducting probe atomic force microscopy characterization indicates that poly(4b) and poly(4c) behave like heavily doped semiconductors rather than pure semiconductors. Mean conductivity values extracted from the current-voltage profiles are 1.4 x 10(-4) and 7.5 x 10(-4) S cm(-1) for poly(4b) and poly(4c), respectively. Such materials are found to be efficient for the electrocatalytic reduction of protons to dihydrogen, as exemplified for poly(4b). The overpotential for hydrogen evolution is significantly decreased by ca. 230 mV with respect to that obtained with the bare electrode (measured for a current density of 1.4 mA cm(-2) in the presence of 20 mM HBF(4)).