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Published on: March 29, 2016
Monte Carlo simulation of focused helium ion beam induced deposition
Daryl A Smith1, David C Joy, Philip D Rack
1Department of Material Science and Engineering, University of Tennessee, Knoxville, USA.
Abstract:
The details of a Monte Carlo helium ion beam induced deposition simulation are introduced and initial results for reaction rate and mass transport limited growth regimes are presented. Reaction rate limited growth leads to fast vertical growth from incident primary ions and minimal lateral broadening, whereas mass transport limited growth has lower vertical growth velocity and exhibits broadening due to scattered ions and secondary electrons. The results are compared to recent experiments and previous electron beam induced deposition simulations.
