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Size effect of nano scale phase change random access memory.

Ji Hoon Son1, HongKyw Choi, Nakwon Jang

  • 1Division of Electrical and Electronics Engineering, Korea Maritime University, Busan 606-791, Korea.

Journal of Nanoscience and Nanotechnology
|April 3, 2010
PubMed
Summary

Investigating nano-scale phase-change memory (PRAM) revealed that smaller top electrode contact holes reduce reset current without impacting memory operation. However, reduced bottom electrode contact holes significantly decrease reset current.

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Nanotechnology

Background:

  • Phase-change random-access memory (PRAM) is a promising non-volatile memory technology.
  • Understanding nanoscale effects is crucial for optimizing PRAM performance and reliability.

Purpose of the Study:

  • To investigate the impact of electrode contact hole size on the reset current and temperature profile of nano-scale PRAM cells.
  • To analyze the influence of GST (Ge2Sb2Te5) thin film dimensions on PRAM performance.

Main Methods:

  • Utilized three-dimensional finite element analysis (FEA) for numerical simulations.
  • Calculated reset current and temperature profiles for PRAM cells with varying top and bottom electrode contact hole sizes.
  • Simulated temperature profiles based on GST thin film size and thickness.

Main Results:

  • A decrease in top electrode contact hole size led to a reduction in reset current.
  • Variations in top electrode contact hole size did not affect the operational capability of the memory.
  • A decrease in bottom electrode contact hole size resulted in an abrupt reduction of reset current.

Conclusions:

  • Electrode contact geometry significantly influences PRAM reset characteristics.
  • Bottom electrode contact size has a more pronounced effect on reset current than top electrode contact size.
  • FEA is a valuable tool for understanding nanoscale phenomena in PRAM devices.