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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Explicit continuous current-voltage (I-V) models for fully-depleted surrounding-gate MOSFETs (SGMOSFETs) with a

Yun Seop Yu1, Namki Cho, Jung Hyun Oh

  • 1Department of Information and Control Engineering and Electronic Technology Institute, Hankyong National University, 456-749 Anseong, Gyeonggi, Korea.

Journal of Nanoscience and Nanotechnology
|April 3, 2010
PubMed

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