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Published on: April 24, 2018
Quantification of thin film crystallographic orientation using X-ray diffraction with an area detector
Jessy L Baker1, Leslie H Jimison, Stefan Mannsfeld
1Department of Mechanical Engineering, University of California, Berkeley, Berkeley, California 94720, USA.
Langmuir : the ACS Journal of Surfaces and Colloids
|April 6, 2010
Summary
This study presents a fast X-ray diffraction method to analyze thin film microstructure. The technique quantifies crystallographic texture, aiding the development of advanced electronic and optoelectronic devices.
Area of Science:
- Materials Science
- Crystallography
- Thin Film Technology
Background:
- Thin films are crucial for solar cells, LEDs, microelectronics, and batteries.
- Predicting and optimizing film properties requires quantitative morphological and crystallographic data.
- X-ray diffraction (XRD) with an area detector offers a rapid solution.
Purpose of the Study:
- To describe a methodology for constructing complete pole figures for thin films with fiber texture.
- To enable rapid and easy quantification of thin film microstructure.
- To facilitate the understanding of structure-property relationships in thin films.
Main Methods:
- Utilizing X-ray diffraction (XRD) with an area detector.
- Employing two distinct sample geometries.
- Developing a methodology for complete pole figure construction in thin films with fiber texture.
Main Results:
- Demonstrated the technique on semicrystalline polymer films.
- Successfully applied to self-assembled nanoparticle semiconductor films.
- Validated on randomly packed metallic nanoparticle films, showing its versatility.
Conclusions:
- The described XRD methodology provides quick and easy quantitative morphological and crystallographic information.
- This technique can be immediately implemented to link film processing with microstructure.
- Enables the development of improved and cost-effective electronic and optoelectronic devices.
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