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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
G Theocharis1, M Kavousanakis, P G Kevrekidis
1Department of Mathematics and Statistics, University of Massachusetts, Amherst, Massachusetts 01003-4515, USA.
Light-mass impurities are essential for creating localized modes in compressed elastic chains. Nonlinearity causes frequency-dependent amplitudes and symmetry-breaking, crucial for understanding wave propagation in these systems.
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