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Electron cotunneling into a Kondo lattice.
Marianna Maltseva1, M Dzero, P Coleman
1Center for Materials Theory, Rutgers University, Piscataway, New Jersey 08854, USA.
We present a theory for electron tunneling into Kondo lattices, explaining how cotunneling affects spin flips. Disorder in heavy-electron materials can smear the hybridization gap, creating a Fano line shape in tunneling conductance.
Area of Science:
- Condensed Matter Physics
- Quantum Mechanics
- Materials Science
Background:
- Recent experimental interest in tunneling into heavy-electron materials.
- Kondo lattice systems exhibit complex electronic properties due to interactions between conduction electrons and localized magnetic moments.
Purpose of the Study:
- To develop a theoretical framework for electron tunneling into a Kondo lattice.
- To investigate the role of cotunneling and disorder on tunneling conductance.
Main Methods:
- Utilizing large-N mean field theory to compute tunneling current.
- Analyzing the effects of hybridization gap and disorder on conductance.
Main Results:
- Electron tunneling involves simultaneous spin flips of localized moments via cotunneling.
- In clean systems, differential tunneling conductance shows two peaks split by the hybridization gap.
- Disorder leads to a smeared gap and a Fano line shape in the conductance.
Conclusions:
- The study provides a theoretical explanation for electron tunneling phenomena in Kondo lattices.
- The findings highlight the significant impact of disorder on the electronic transport properties of these materials.
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