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Dominant mobility modulation by the electric field effect at the LaAlO3/SrTiO3 interface
C Bell1, S Harashima, Y Kozuka
1Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277-8651, Japan.
Physical Review Letters
|April 7, 2010
Summary
Researchers investigated the gate-modulated superconducting LaAlO3/SrTiO3 interface. They found electric fields primarily affect electron mobility, not carrier density, influencing superconductivity and disorder strength across the transition.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Phenomena
Background:
- The LaAlO3/SrTiO3 interface exhibits tunable superconductivity via electric fields.
- Understanding the dominant mechanism of electric field modulation is crucial for controlling interfacial properties.
Purpose of the Study:
- To elucidate the primary effect of applied electric fields on the superconducting LaAlO3/SrTiO3 interface.
- To investigate the relationship between carrier density, mobility, and superconductivity under electric field modulation.
Main Methods:
- Magnetotransport studies were performed on a gated LaAlO3/SrTiO3 heterostructure.
- Measurements analyzed the variations in sheet carrier density and electron mobility with applied gate bias.
Main Results:
- Electron mobility variations were found to be approximately five times larger than sheet carrier density variations.
- Superconductivity was suppressed at both positive and negative gate biases.
- These findings suggest a significant increase in relative disorder strength near the superconductor-insulator transition.
Conclusions:
- The electric field's principal effect on the LaAlO3/SrTiO3 interface is the modulation of electron mobility.
- The observed suppression of superconductivity and increased disorder highlight the complex interplay between electric fields, mobility, and quantum phase transitions.
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