In-Sio(2) cermet films for optical recording.

Area of Science:

• Materials Science
• Nanotechnology
• Optical Engineering

Background:

• Cermet films, specifically In-SiO2, are investigated for their potential in metal film ablation memory applications.
• Achieving stable and efficient optical data storage requires optimizing material properties and writing processes.

Purpose of the Study:

• To explore In-SiO2 cermet films as a novel optical recording medium.
• To determine optimal compositions for specular surfaces and low writing thresholds.
• To investigate methods for reducing laser writing power.

Main Methods:

• Fabrication and characterization of In-SiO2 cermet films with varying SiO2 content (40-60 vol.%).
• Utilizing the temperature bias method to study pit formation dynamics.
• Implementing a trigger layer (phthalocyanine) in conjunction with a Bi-Pb-Sn-In eutectic alloy and In-SiO2 cermet film.

Main Results:

• Specular surfaces and minimum writing threshold laser power were achieved with SiO2 content of 40-60 vol.%.
• A writing threshold laser energy of 35 mJ/cm² was obtained using the cermet film with a phthalocyanine trigger layer.
• In-SiO2 cermet films demonstrated excellent thermal stability up to 500°C and water stability.

Conclusions:

• In-SiO2 cermet films are suitable for optical recording media in metal film ablation memory.
• The use of a trigger layer significantly reduces the required laser writing energy.
• The material's stability and low writing threshold make it a promising candidate for next-generation optical storage devices.