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Related Concept Videos

Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Published on: July 24, 2015

Charge noise in graphene transistors.

Iddo Heller1, Sohail Chatoor, Jaan Männik

  • 1Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, Delft, The Netherlands.

Nano Letters
|April 9, 2010
PubMed
Summary

This study investigates 1/f noise in graphene transistors, finding a charge-noise model accurately describes the gate dependence. Device area and layer count impact noise levels, with implications for electronic device performance.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • 1/f noise is a ubiquitous phenomenon in electronic devices.
  • Understanding noise sources in graphene transistors is crucial for their application.
  • Existing models like Hooge's relation may not fully capture noise mechanisms in novel materials.

Purpose of the Study:

  • To experimentally investigate 1/f noise in liquid-gated graphene transistors.
  • To determine the dominant noise mechanisms as a function of carrier density.
  • To compare the effectiveness of different noise models for graphene.

Main Methods:

  • Fabrication and characterization of liquid-gated graphene transistors (single-layer and bilayer).
  • Experimental measurement of 1/f noise spectra under varying gate bias conditions.
  • Analysis of noise power spectral density and its dependence on carrier density, device area, and environment.

Main Results:

  • The gate dependence of 1/f noise is accurately described by a charge-noise model, outperforming Hooge's empirical relation.
  • At low carrier densities, noise originates from fluctuating charges near the graphene channel.
  • At high carrier densities, noise is attributed to channel scattering; noise power scales inversely with device area.
  • Bilayer graphene devices show lower noise levels compared to single-layer devices.
  • Observed noise in air is also consistent with the charge-noise model.

Conclusions:

  • The charge-noise model provides a robust framework for understanding 1/f noise in liquid-gated graphene transistors.
  • Device design parameters, such as area and layer number, significantly influence noise performance.
  • The findings offer insights into optimizing graphene-based electronic devices by mitigating noise.