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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Gate-defined graphene double quantum dot and excited state spectroscopy.

Xing Lan Liu1, Dorothee Hug, Lieven M K Vandersypen

  • 1Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands. xinglan.liu@tudelft.nl

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Summary

Researchers created a double quantum dot in a graphene nanoribbon, observing transport through excited states. They successfully extracted system capacitances and quantized level spacing from measurements.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Quantum Computing

Background:

  • Graphene nanoribbons are promising materials for nanoelectronic devices.
  • Quantum dots offer unique electronic properties for quantum information processing.
  • Controlling electron interactions in quantum dot systems is crucial for device applications.

Purpose of the Study:

  • To fabricate and characterize a double quantum dot system in a graphene nanoribbon.
  • To investigate transport through excited states in a weakly coupled double dot regime.
  • To extract key electronic parameters of the double quantum dot system.

Main Methods:

  • Device fabrication using a graphene nanoribbon.
  • Utilizing three top gates for independent control of electron occupation and interdot coupling.
  • Electrical transport measurements to probe quantum phenomena.

Main Results:

  • Successful formation of a double quantum dot in the graphene nanoribbon.
  • Observation of transport through excited states in the weakly coupled regime.
  • Extraction of all relevant capacitances and quantized level spacing for the double dot system.

Conclusions:

  • The study demonstrates precise control over a double quantum dot system in graphene nanoribbons.
  • The findings provide essential parameters for designing and optimizing graphene-based quantum devices.
  • This work contributes to the advancement of quantum electronics and solid-state spin qubits.