Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational characteristics.
The structure...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Transmission Electron Microscopy Analysis of the Microstructure of Nanocrystalline Small-Molecule Semiconductors in Functional Organic Thin-Film Transistors.

ACS applied materials & interfaces·2026
Same author

Flexible n-Channel Organic Transistors with Low Contact Resistance.

ACS applied materials & interfaces·2025
Same author

Flexible low-voltage organic transistors with a transit frequency of 40 MHz and an on/off current ratio of 10 orders of magnitude.

Science advances·2025
Same author

Unveiling the Effects of Hydroxyl-Induced Trap States on the Charge Transport in p- and n-Channel Organic Field-Effect Transistors through Variable-Temperature Characterization.

Advanced materials (Deerfield Beach, Fla.)·2025
Same author

Reliability of the Transmission Line Method and Reproducibility of the Measured Contact Resistance of Organic Thin-Film Transistors.

ACS nano·2025
Same author

Thickness Dependent Structural Transition in Ph-BTBT-10 Thin Films and Stabilization of the Ubiquitous Interface Bilayer.

ACS applied materials & interfaces·2025

Related Experiment Video

Updated: Jun 13, 2026

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor
11:17

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor

Published on: February 10, 2014

Organic thin-film transistors.

Hagen Klauk1

  • 1Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, Germany.

Chemical Society Reviews
|April 17, 2010
PubMed
Summary

Organic transistors have advanced significantly over 20 years, moving from lab experiments to commercial viability. This review covers key aspects like materials, manufacturing, and performance of these electronic devices.

Area of Science:

  • Materials Science
  • Electronics Engineering
  • Solid State Physics

Background:

  • Organic transistors have evolved from niche laboratory research into a commercially relevant technology over the last two decades.
  • The field has seen substantial progress, necessitating a consolidated overview of its key developments.

Purpose of the Study:

  • To provide a critical review of significant advancements in organic transistor technology.
  • To summarize crucial aspects including materials, microstructure, carrier transport, manufacturing, electrical properties, and performance limitations.

Main Methods:

  • Literature review of organic transistor research over the past 20 years.
  • Synthesis of information from approximately 200 references.

Main Results:

More Related Videos

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors
10:44

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors

Published on: January 31, 2025

Spray-Coated Melanin/PEDOT:PSS Films for Sustainable Organic Electrochemical Transistors
08:26

Spray-Coated Melanin/PEDOT:PSS Films for Sustainable Organic Electrochemical Transistors

Published on: October 28, 2025

Related Experiment Videos

Last Updated: Jun 13, 2026

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor
11:17

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor

Published on: February 10, 2014

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors
10:44

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors

Published on: January 31, 2025

Spray-Coated Melanin/PEDOT:PSS Films for Sustainable Organic Electrochemical Transistors
08:26

Spray-Coated Melanin/PEDOT:PSS Films for Sustainable Organic Electrochemical Transistors

Published on: October 28, 2025

  • Identification of key materials and microstructural influences on organic transistor performance.
  • Analysis of carrier transport mechanisms and manufacturing techniques.
  • Summary of electrical properties and current performance limitations.

Conclusions:

  • Organic transistors represent a mature technology with ongoing potential for further development.
  • Understanding the interplay of materials, processing, and device physics is crucial for future advancements.