Related Experiment Video
Updated: Jan 8, 2026
08:43
Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
8.4K
Flexible n-Channel Organic Transistors with Low Contact Resistance
Sabrina Steffens1, Tobias Wollandt1, Karla Cordero-Solano1
1Max Planck Institute for Solid State Research, Heisenbergstraße 1, Stuttgart 70569, Germany.
ACS Applied Materials & Interfaces
|December 22, 2025
Summary
Researchers developed n-channel organic thin-film transistors (TFTs) using novel semiconductors. Functionalized contacts with 4-(methylsulfanyl)-thiophenol achieved record-low contact resistance on silicon and flexible substrates, demonstrating excellent bending stability.
Area of Science:
- Organic electronics
- Materials science
- Semiconductor physics
Background:
- Advancements in organic semiconductors are crucial for developing flexible and low-cost electronic devices.
- Improving charge injection and transport in n-channel organic thin-film transistors (TFTs) remains a key challenge.
- Contact resistance significantly impacts the performance of organic TFTs.
Purpose of the Study:
- To fabricate and characterize n-channel organic TFTs using three promising small-molecule organic semiconductors.
- To investigate the effect of contact functionalization on device performance, particularly contact resistance.
- To evaluate device performance on both rigid silicon and flexible polymeric substrates.
Main Methods:
- Fabrication of inverted staggered and inverted coplanar n-channel TFTs using TAPP-Br4, ActivInk N1100, and PhC2-BQQDI.
- Functionalization of source and drain contacts with four different thiols, including 4-(methylsulfanyl)-thiophenol (MeSTP).
- Electrical characterization of TFTs on silicon and flexible substrates under ambient conditions.
Main Results:
- PhC2-BQQDI based TFTs with MeSTP-functionalized contacts exhibited the best performance.
- Record-low contact resistances of 130 Ω cm (silicon) and 210 Ω cm (flexible substrates) were achieved.
- TFTs on flexible substrates demonstrated excellent bending stability and performance in ambient air.
Conclusions:
- Contact functionalization with MeSTP effectively minimizes contact resistance in n-channel organic TFTs due to its low effective work function.
- The developed organic TFTs show potential for high-performance, flexible electronic applications.
- Achieving low contact resistance in ambient air is a significant step towards practical organic electronics.
Related Concept Videos
01:29Field Effect Transistor
1.1K
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
1.1K
01:22MOSFET: Enhancement Mode
742
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
742
01:16MOSFET
1.1K
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
In an n-MOSFET, the structure includes n-type source and drain...
1.1K
01:17Characteristics of MOSFET
872
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
872
01:22Biasing of FET
648
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
648
01:22Bipolar Junction Transistor
1.4K
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
1.4K