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Characterization of Anisotropic Leaky Mode Modulators for Holovideo
Published on: March 19, 2016
Leaky-mode resonant reflectors with extreme bandwidths
Mehrdad Shokooh-Saremi1, Robert Magnusson
1Department of Electrical Engineering, University of Texas at Arlington, Arlington, Texas 76019, USA. saremi@uta.edu
Optics Letters
|April 23, 2010
Summary
New flat-band reflectors with multilevel resonant leaky-mode structures achieve ultrawide bandwidths. These advanced photonic devices demonstrate high reflectance for both silicon-on-insulator and germanium-on-insulator systems.
Area of Science:
- Photonics
- Electromagnetics
- Materials Science
Background:
- Flat-band reflectors are crucial optical components.
- Achieving ultrawide bandwidths with high reflectance remains a challenge.
Purpose of the Study:
- To design and demonstrate ultrawide flat-band reflectors using multilevel resonant leaky-mode structures.
- To explore the performance of these reflectors in silicon-on-insulator and germanium-on-insulator systems.
Main Methods:
- Utilized multilevel resonant leaky-mode structures for reflector design.
- Employed particle swarm optimization for device design and optimization.
Main Results:
- Achieved ~840 nm (TE) and ~835 nm (TM) bandwidths (>99% and >97.5% reflectance) in silicon-on-insulator.
- ~1100 nm (TE) and ~1050 nm (TM) bandwidths (>99% reflectance) demonstrated in germanium-on-insulator.
- High reflectance maintained over ultrawide spectral ranges.
Conclusions:
- Multilevel resonant leaky-mode structures are effective for creating ultrawide bandwidth reflectors.
- Demonstrated potential for SOI and GOI systems in advanced photonic applications.
- Highlights the versatility of leaky-mode elements in electromagnetics and photonics.
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