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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Self-formed exchange bias of switchable conducting filaments in NiO resistive random access memory capacitors

Jong Yeog Son1, Cheol Hwan Kim, Jin Hyoung Cho

  • 1Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea.

ACS Nano
|May 4, 2010
PubMed

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