Thermal infrared emission from biased graphene

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Graphene's high carrier mobility and thermal conductivity position it as a key material for advanced high-speed electronics.
• The thermal behavior of high-speed electronic devices significantly impacts performance, yet graphene device thermal properties are not fully understood.

Purpose of the Study:

• To investigate the thermal properties of graphene transistors.
• To develop a non-invasive method for characterizing graphene devices.
• To understand the relationship between electrical bias, gate voltage, and thermal behavior in graphene.

Main Methods:

• Utilizing spatially resolved thermal radiation emitted from biased graphene transistors.
• Analyzing infrared emission to extract temperature distribution, carrier densities, and the Dirac point location.
• Controlling the location of the temperature maximum using gate voltage.

Main Results:

• Demonstrated that infrared emission from biased graphene transistors can map temperature distributions.
• Successfully extracted carrier densities and the spatial location of the Dirac point.
• Observed that the graphene temperature maximum's position is gate-voltage controllable.
• Identified stationary hot spots within the graphene channel.

Conclusions:

• Spatially resolved thermal radiation is a powerful, non-invasive tool for characterizing graphene devices.
• The findings provide crucial insights into the thermal behavior of graphene transistors, essential for high-speed electronics.
• Gate voltage control over thermal properties opens avenues for thermal management in graphene-based devices.