Thermal infrared emission from biased graphene
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Updated: Jun 13, 2026

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings
Published on: April 16, 2017
Marcus Freitag1, Hsin-Ying Chiu, Mathias Steiner
1IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA. mfreitag@us.ibm.com
Abstract:
The high carrier mobility and thermal conductivity of graphene make it a candidate material for future high-speed electronic devices. Although the thermal behaviour of high-speed devices can limit their performance, the thermal properties of graphene devices remain incompletely understood. Here, we show that spatially resolved thermal radiation from biased graphene transistors can be used to extract the temperature distribution, carrier densities and spatial location of the Dirac point in the graphene channel. The graphene exhibits a temperature maximum with a location that can be controlled by the gate voltage. Stationary hot spots are also observed. Infrared emission represents a convenient and non-invasive characterization tool for graphene devices.
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