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Updated: Jun 13, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
Horizontally aligned carbon nanotube bundles for interconnect application: diameter-dependent contact resistance and
Yang Chai1, Zhiyong Xiao, Philip C H Chan
1Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, People's Republic of China. eeychai@ee.ust.hk
Abstract:
We have demonstrated the fabrication of horizontally aligned carbon nanotube (CNT) bundles on Si substrate for interconnect line application. By controlling the catalyst thickness, we fabricated multi-walled CNT and few-walled CNT bundles with different diameters. We measured the resistances of the CNTs as a function of the length and the diameter. The dependence of the contact resistance between the CNT and the metal on the CNT diameter was extracted from the resistance plots. We investigated and experimentally validated the relationship between the diameter and the mean free path of the CNT.

