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Updated: Jun 12, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Spectroscopic measurement of interlayer screening in multilayer epitaxial graphene
Dong Sun1, Charles Divin, Claire Berger
1Center for Ultrafast Optical Science, University of Michigan, Ann Arbor, Michigan 48109-2099, USA.
Abstract:
The substrate-induced charge-density profile in carbon face epitaxial graphene is determined using nondegenerate ultrafast midinfrared pump-probe spectroscopy. Distinct zero crossings in the differential transmission spectra are used to identify the Fermi levels of layers within the multilayer stack. Probing within the transmission window of the SiC substrate, we find the Fermi levels of the first four heavily doped layers to be, respectively, 360, 215, 140, and 93 meV above the Dirac point. The charge screening length is determined to be one graphene layer, in good agreement with theoretical predictions.
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