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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Conductance fluctuations and field asymmetry of rectification in graphene

C Ojeda-Aristizabal1, M Monteverde, R Weil

  • 1Laboratoire de Physique des Solides, Univ. Paris-Sud, CNRS, UMR 8502, F-91405 Orsay Cedex, France.

Physical Review Letters
|May 21, 2010
PubMed

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