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Updated: Jun 12, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Manipulation of spin transport in graphene by surface chemical doping
1Department of Physics and Astronomy, University of California, Riverside, California 92521, USA.
Abstract:
The effects of surface chemical doping on spin transport in graphene are investigated by performing nonlocal measurements in ultrahigh vacuum while depositing gold adsorbates. We demonstrate manipulation of the gate-dependent nonlocal spin signal as a function of gold coverage. We discover that charged impurity scattering is not the dominant mechanism for spin relaxation in graphene, despite its importance for momentum scattering. Finally, unexpected enhancements of the spin lifetime illustrate the complex nature of spin relaxation in graphene.

