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Related Experiment Video

Updated: Jun 12, 2026

Design and Development of a Three-Dimensionally Printed Microscope Mask Alignment Adapter for the Fabrication of Multilayer Microfluidic Devices
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Design and Development of a Three-Dimensionally Printed Microscope Mask Alignment Adapter for the Fabrication of Multilayer Microfluidic Devices

Published on: January 25, 2021

Phase-locked interferometry for automatic mask alignment in projection printers.

G Makosch, F Prein

    Applied Optics
    |May 22, 2010
    PubMed
    Summary
    This summary is machine-generated.

    This study presents an interferometric mask alignment technique using phase-locked cross grids and a He-Ne laser for precise nanometer-level alignment in projection printing. The method achieves rapid cycle times below 0.3 seconds for efficient semiconductor manufacturing.

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    Published on: June 12, 2018

    Area of Science:

    • Optics and Photonics
    • Semiconductor Manufacturing Technology
    • Precision Metrology

    Background:

    • Accurate mask alignment is critical for high-yield semiconductor lithography.
    • Existing alignment methods face challenges in achieving nanometer-level precision and speed.
    • Interferometric techniques offer potential for enhanced alignment accuracy.

    Purpose of the Study:

    • To develop and evaluate a novel interferometric mask alignment technique for projection printing.
    • To achieve nanometer-level registration precision and sub-second cycle times.
    • To demonstrate the suitability of the method for each-field alignment in projection steppers.

    Main Methods:

    • Utilizes a phase-locked interferometric method to determine mask-to-wafer offset.
    • Employs cross grid alignment patterns illuminated by a He-Ne laser.
    • Incorporates a tiltable glass plate driven by a galvanometric scanner for phase modulation and fine alignment.
    • PC-controlled system for integrated registration and fine alignment operations.

    Main Results:

    • Achieves registration precision in the nanometer region.
    • Demonstrates cycle times below 0.3 seconds for the total alignment operation.
    • Confirms the effectiveness of the phase-locked interferometric approach for mask alignment.

    Conclusions:

    • The described mask alignment technique offers high precision and speed.
    • The method is well-suited for demanding applications like each-field alignment in projection steppers.
    • Theoretical and experimental results validate the performance of the developed system.