Related Experiment Video
Updated: Jun 12, 2026
11:42
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Epitaxial graphene on 4H-SiC by pulsed electron irradiation
Qingsong Huang1, Xiaolong Chen, Jun Liu
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100083, PR China.
Chemical Communications (Cambridge, England)
|June 10, 2010
Abstract:
Controlled sublimation of silicon on a SiC surface based on pulsed electron irradiation (PEI) is presented as an effective route to quality graphene. The PEI allows us to obtain graphene in millimetre-scale within three monolayers, and is a potential candidate for preparing high quality large graphene with controlled layers.
