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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
Published on: November 24, 2016
Use of plasma-activated gases in synthesis of solid-state nitrides
1Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 70569, Stuttgart, Germany. G.Vajenine@fkf.mpg.de
Dalton Transactions (Cambridge, England : 2003)
|June 24, 2010
Abstract:
Basic properties of the plasma state are summarized, with the emphasis on low-pressure, non-isothermal, and cold plasma. The advantages of plasma activation in the synthesis of solid-state materials, especially nitrides, are discussed.
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