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Related Concept Videos

Design Example: Capacitance Multiplier Circuit01:20

Design Example: Capacitance Multiplier Circuit

In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Voltage Dividers01:14

Voltage Dividers

In electrical circuits, resistors can be connected in series, sequentially linked one after the other. In a series configuration, the same current flows through each resistor. Ohm's law is a fundamental principle to understand the behavior of resistors in series. It expresses the voltage across these resistors in terms of the current and resistance.
Kirchhoff's voltage law implies that the sum of the voltages across the resistors in series equals the source voltage. This means that the current...
MOSFET Amplifiers01:17

MOSFET Amplifiers

The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...

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Related Experiment Video

Updated: Jun 11, 2026

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
05:57

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Published on: April 1, 2020

Optical time division multiplexer on silicon chip.

Abdelsalam A Aboketaf1, Ali W Elshaari, Stefan F Preble

  • 1Microsystems Engineering, Kate Gleason College of Engineering, Rochester Institute of Technology, Rochester, New York 14623, USA. axa8863@rit.edu

Optics Express
|July 1, 2010
PubMed
Summary
This summary is machine-generated.

Researchers developed a novel silicon chip optical time division multiplexer (OTDM). This compact device boosts a 5 Gb/s signal to 20 Gb/s and 40 Gb/s, ideal for optical networks.

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Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms
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Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms

Published on: September 25, 2020

Related Experiment Videos

Last Updated: Jun 11, 2026

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
05:57

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Published on: April 1, 2020

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms
08:48

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms

Published on: September 25, 2020

Area of Science:

  • Photonics
  • Integrated Optics
  • Optical Communications

Background:

  • High-speed optical communication systems require efficient signal multiplexing.
  • On-chip optical signal processing is crucial for next-generation networks.
  • Existing multiplexing technologies face limitations in bandwidth and footprint.

Purpose of the Study:

  • To experimentally demonstrate a novel broadband optical time division multiplexer (OTDM) integrated on a silicon chip.
  • To achieve high data rates from a lower input signal speed.
  • To create a compact and broadband solution for on-chip optical networks.

Main Methods:

  • Fabrication of a novel silicon chip-based OTDM device.
  • Experimental setup to test the multiplexer's performance with a 5 Gb/s input signal.
  • Characterization of the output signal speeds and system bandwidth.

Main Results:

  • Successfully generated 20 Gb/s and 40 Gb/s signals from a 5 Gb/s input.
  • The fabricated device occupies a small footprint of 1mm x 1mm.
  • The system exhibits an inherent broadband characteristic with a bandwidth exceeding 100nm.

Conclusions:

  • The demonstrated silicon chip OTDM is a viable technology for high-speed optical networks on chip.
  • The device's compact size and broadband nature offer significant advantages for integration.
  • This technology paves the way for enhanced optical communication capabilities within integrated systems.