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Related Concept Videos

Atomic Force Microscopy01:08

Atomic Force Microscopy

Atomic force microscopy (AFM) is a type of scanning probe microscopy that can analyze topographic details of various specimens like ceramics, glass, polymers, and biological samples. AFM offers over 1000 times more resolution than the optical imaging system. Images generated from AFM are three-dimensional surface profiles, offering an advantage over the flat, two-dimensional images from other imaging techniques.
The AFM Probe
The probe is regarded as the heart of any AFM setup and comprises the...

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Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
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Imaging dislocations in gallium nitride across broad areas using atomic force microscopy.

S E Bennett1, D Holec, M J Kappers

  • 1Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom.

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|July 2, 2010
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Summary

High-resolution atomic force microscopy reveals the spatial distribution of threading dislocations (TDs) in Gallium Nitride (GaN) using an automated software tool for precise identification.

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Last Updated: Jun 11, 2026

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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

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Active Probe Atomic Force Microscopy with Quattro-Parallel Cantilever Arrays for High-Throughput Large-Scale Sample Inspection

Published on: June 13, 2023

Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Gallium Nitride (GaN) is a critical material for electronic and optoelectronic devices.
  • Understanding the distribution of threading dislocations (TDs) is essential for optimizing GaN material quality.
  • Surface pits are often associated with TDs, but their detailed imaging and analysis can be challenging.

Purpose of the Study:

  • To develop and apply high-resolution imaging techniques for detailed analysis of threading dislocations (TDs) in Gallium Nitride (GaN).
  • To identify and map the spatial distribution of TDs using atomic force microscopy (AFM) and Kelvin probe force microscopy (KPFM).
  • To introduce an automated software tool for efficient TD coordinate identification.

Main Methods:

  • Utilizing atomic force microscopy (AFM) with a high sampling rate to image GaN samples.
  • Employing silane and ammonia treatments to enlarge surface pits linked to TDs.
  • Applying Kelvin probe force microscopy (KPFM) at high pixel density to analyze surface potential variations.
  • Developing an automated software tool for identifying TD coordinates within AFM images.

Main Results:

  • High pixel density AFM images successfully identified TDs in tens of microns sized GaN samples.
  • The spatial distribution of TDs was accurately mapped, providing detailed insights.
  • Kelvin probe force microscopy (KPFM) revealed local surface potential changes associated with hundreds of dislocations.
  • An automated software tool efficiently determined the coordinates of TDs in the images.

Conclusions:

  • High-resolution AFM and KPFM are effective for detailed characterization of TDs in GaN.
  • The developed automated software tool enhances the efficiency of TD analysis.
  • This study provides valuable data on TD distribution and surface potential for GaN material optimization.