The detection of electron-beam-induced current in junctionless semiconductor

Area of Science:

• Materials Science
• Semiconductor Physics
• Electron Microscopy

Background:

• Scanning electron microscopy (SEM) and its electron beam techniques are crucial for semiconductor characterization.
• The conventional electron-beam-induced current (EBIC) technique requires charge collecting junctions, limiting its use in junctionless samples.
• Special sample preparation is often needed for junctionless materials, adding complexity to EBIC analysis.

Purpose of the Study:

• To present a novel technique for detecting EBIC in junctionless semiconductor samples using a two-point probe.
• To investigate the conditions under which EBIC measurements are independent of sample parameters.
• To analyze the influence of generation volume depth, probe spacing, and applied bias on the EBIC signal.

Main Methods:

• Development and application of a two-point probe method for EBIC detection in junctionless samples.
• Experimental analysis of EBIC current dependence on sample thickness and probe geometry.
• Utilizing a two-dimensional device simulator for technique verification.

Main Results:

• Established that EBIC current becomes independent of physical parameters when sample thickness exceeds 4L and specific width conditions relative to probes are met.
• Identified key parameters influencing EBIC detection, including generation volume depth, probe spacing, and applied bias.
• Validated the two-point probe EBIC technique through simulations.

Conclusions:

• The presented two-point probe technique offers a viable alternative for EBIC analysis in junctionless semiconductor materials.
• The findings provide critical insights into optimizing EBIC measurements without requiring pre-fabricated junctions.
• This method enhances the versatility of electron beam techniques in semiconductor research.