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Updated: Jun 10, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Published on: November 24, 2016

Monte Carlo based geometrical model for efficiency calculation of an n-type HPGe detector

Fatima Padilla Cabal1, Neivy Lopez-Pino, Jose Luis Bernal-Castillo

  • 1Instituto Superior de Tecnologias y Ciencias Aplicadas, Quinta de los Molinos Ave. Salvador Allende, esq. Luaces, Plaza de la Revolucion, Ciudad de la Habana, CP 10400, Cuba. fpadilla@instec.cu

Applied Radiation and Isotopes : Including Data, Instrumentation and Methods for Use in Agriculture, Industry and Medicine
|July 21, 2010
PubMed

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