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Well-aligned Vertically Oriented ZnO Nanorod Arrays and their Application in Inverted Small Molecule Solar Cells
Published on: April 25, 2018
The fabrication of a patterned ZnO nanorod array for high brightness LEDs
Hyoungwon Park1, Kyeong-Jae Byeon, Ki-Yeon Yang
1Department of Materials Science and Engineering, Korea University, Seongbuk-Ku, Seoul, Korea.
Abstract:
In this study, a patterned ZnO nanorod array was formed on the ITO layer of GaN-based light-emitting diodes (LEDs), to increase the light extraction efficiency of the LED. The bi-layer imprinted resin pattern was used for selective growth of the ZnO nanorod array on the ITO layer. Compared to conventional LEDs grown on patterned sapphire substrate (PSS), the deposition of the blanket ZnO layer on the ITO layer increased the light extraction efficiency of the LED by about 10%. Further growth of the ZnO nanorod layer on the blanket ZnO layer increased the light extraction efficiency of the LED by about 23%. In the case that a patterned ZnO nanorod layer was formed on a blanket ZnO layer, the light extraction efficiency increased by about 34%. These enhancements of the device were caused by modulation of the refractive-index in ZnO layers and the surface roughening effects because of the unique design of the pattern, which was nanostructure-in-nanopattern, resulting in the formation of many escape cones on the LED surface.
