Direct patterning of covalent organic monolayers on silicon using nanoimprint lithography

Two fabrication schemes are reported for the direct patterning of organic monolayers on oxide-free silicon, combining top-down nanoimprint lithography and bottom-up monolayer formation. The first approach was designed to form monolayer patterns on the imprinted areas, while the second approach was designed for monolayer formation outside of the imprinted features. By both approaches, covalently bonded Si-C monolayer patterns with feature sizes ranging from 100 nm to 100 microm were created via a hydrosilylation procedure using diluted reagents. Both unfunctionalized and omega-functionalized alkenes were patterned successfully.