Related Experiment Video
Updated: Jun 10, 2026

11:08
Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities
Published on: November 30, 2012
Positive pulse switching in coupled nonlinear Fabry-Perot cavities
Applied Optics
|August 12, 2010
Summary
Positive pulse switching is demonstrated in coupled nonlinear Fabry-Perot cavities. This research details conditions for controlling signal beams using positive pulses in Kerr media with long diffusion lengths.
Area of Science:
- Nonlinear optics
- Optical cavity physics
Background:
- Fabry-Perot cavities are fundamental optical resonators.
- Nonlinear optical effects are crucial for advanced light manipulation.
Purpose of the Study:
- To investigate the feasibility of positive pulse switching in coupled nonlinear Fabry-Perot cavities.
- To identify the operational conditions for switching signal beams on and off.
Main Methods:
- Theoretical analysis of coupled nonlinear Fabry-Perot cavities.
- Modeling of optical switching using positive pulses.
- Examination of steady-state regimes in Kerr media with long diffusion lengths.
Main Results:
- Positive pulse switching is shown to be achievable in this system.
- Specific conditions for effective signal beam switching were determined.
- The role of Kerr media with long diffusion lengths was elucidated.
Conclusions:
- Coupled nonlinear Fabry-Perot cavities offer a viable platform for optical pulse switching.
- The findings provide insights into controlling light signals using nonlinear optical phenomena.
Related Concept Videos
Biasing of FET
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
Biasing of P-N Junction
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Standing Waves in a Cavity
A household microwave and lasers are examples of standing electromagnetic waves in a cavity. When two conducting metal plates are placed parallel at the nodal planes, it creates a cavity where standing waves are formed. The cavity between the two planes is analogous to a stretched string held at the points x = 0 and x = L. Here, the distance 'L' between the two planes must be an integer multiple of half of the wavelength. The wavelengths that satisfy this condition are given by:
Oscillations In An LC Circuit
An idealized LC circuit of zero resistance can oscillate without any source of emf by shifting the energy stored in the circuit between the electric and magnetic fields. In such an LC circuit, if the capacitor contains a charge q before the switch is closed, then all the energy of the circuit is initially stored in the electric field of the capacitor. This energy is given by
Biasing of Metal-Semiconductor Junctions
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
NMR Spectrometers: Radiofrequency Pulses and Pulse Sequences
A pulse is a short burst of radio waves distributed over a range of frequencies that simultaneously excites all the nuclei in the sample. Upon passing a radio frequency pulse along the x-axis, the nuclei absorb energy corresponding to their Larmor frequencies and achieve resonance. This shifts the net magnetization vector from the z-axis toward the transverse plane. This angle of rotation of the magnetization vector, or the flip angle, is proportional to the duration and intensity of the pulse.
