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Related Experiment Video

Updated: Jun 10, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

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Published on: July 24, 2015

Strain-induced pseudomagnetic field for novel graphene electronics.

Tony Low¹, F Guinea

¹Network for Computational Nanoelectronics, Hall for Discovery Learning Research, Purdue University, West Lafayette, Indiana 47907-1791, USA. tonyaslow@gmail.com

|August 19, 2010

Summary

Strained graphene flakes exhibit transport gaps due to edge scattering, enabling potential nanoelectronic applications. A magnetic field induces valley polarization, offering a robust method for valleytronics devices.

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Area of Science:

Condensed matter physics
Materials science
Nanoscience

Background:

Strained graphene can generate significant pseudomagnetic fields.
Potential applications exist in graphene nanoelectronics and valleytronics.

Purpose of the Study:

Investigate the exploitation of strain-induced pseudomagnetic fields in graphene.
Examine the feasibility of practical electronics and valleytronics devices.

Main Methods:

Quantum transport calculations on realistic strained graphene flakes (100 nm).
Analysis of elastic backscattering at rough edges.
Application of a real magnetic field.

Main Results:

Formation of well-defined transport gaps (100 meV) under moderate strain (10%).
Magnetic field induces spatial and energy separation of valley states.
Demonstration of bulk valley polarization insensitive to short-range scattering.

Conclusions:

Strain engineering in graphene offers pathways for novel electronic and valleytronic functionalities.
Transport gaps and magnetic-field-induced valley polarization are key exploitable effects.