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Corrugation gratings for fast integrated complementary metal-oxide semiconductor photodetectors: implementation and
Applied Optics
|August 19, 2010
Summary
A novel corrugation grating structure improves photodiode response times for optical interconnections. This silicon-based grating reduces photon absorption depth, enhancing performance in very-large-scale-integrated circuits.
Area of Science:
- Optoelectronics
- Materials Science
- Integrated Circuit Design
Background:
- Photodiodes are crucial for optical interconnections in integrated circuits.
- Shallow p-n junction photodiodes require fast response times.
- Photon absorption depth limits photodiode speed.
Purpose of the Study:
- To investigate a corrugation grating structure for enhanced photodiode performance.
- To demonstrate the feasibility of reducing photon-absorption depth.
- To improve response times for shallow p-n junction photodiodes.
Main Methods:
- Simulation experiments were conducted.
- A corrugation grating structure at the silicon-silicon dioxide interface was designed.
- Standard complementary metal-oxide semiconductor fabrication steps were considered for grating generation.
Main Results:
- The corrugation grating structure significantly reduces photon-absorption depth.
- Simulations show a reduction in 1/e photon-penetration depth by half.
- This reduction is compared to photodiodes without a grating.
Conclusions:
- The corrugation grating structure is a feasible method to enhance photodiode response times.
- This technique offers improved performance for optical interconnections in very-large-scale-integrated circuits.
- The proposed fabrication method is compatible with existing semiconductor processes.
