Fiber field-effect device via in situ channel crystallization

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Amorphous semiconductors present challenges in electronic applications due to high defect densities and resistivity.
• Integrating functional electronic components into flexible and wearable formats remains a significant technological hurdle.

Purpose of the Study:

• To investigate the in situ crystallization of amorphous semiconductors within multimaterial fiber devices.
• To demonstrate the fabrication of a long, single-fiber field-effect device.
• To explore the potential for enhanced functionality in fiber-based electronics.

Main Methods:

• In situ crystallization of incorporated amorphous semiconductor within a multimaterial fiber device.
• Post-drawing crystallization process for fabricating the fiber device.

Main Results:

• Achieved a large decrease in defect density within the metal-insulator-crystalline semiconductor structure.
• Observed a five-order-of-magnitude decrease in resistivity.
• Successfully demonstrated the first tens-of-meters-long single-fiber field-effect device.

Conclusions:

• In situ crystallization is an effective method for reducing semiconductor defects and resistivity in fiber devices.
• The developed process enables the creation of long-scale, functional fiber electronics.
• This advancement opens opportunities for integrating advanced functionalities into textiles and fabrics.