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Resistive switches and memories from silicon oxide
Jun Yao1, Zhengzong Sun, Lin Zhong
1Applied Physics Program through the Department of Bioengineering, Rice University, 6100 Main Street, Houston, Texas 77005, USA.
Nano Letters
|September 3, 2010
Summary
Silicon oxide (SiO(x)) is demonstrated as an active material for metal-free resistive switches and memories. This novel application leverages silicon (Si) nanocrystals (NCs) embedded within SiO(x) for device functionality.
Area of Science:
- Materials Science
- Nanotechnology
- Solid-State Electronics
Background:
- Silicon oxide (SiO(x)) traditionally serves as a passive dielectric material in electronic devices.
- Existing memory and switch technologies often rely on metal-based components.
Purpose of the Study:
- To demonstrate SiO(x) as the sole active material in resistive switches and memories.
- To explore metal-free embodiments for electronic devices.
Main Methods:
- Utilized cross-sectional transmission electron microscopy (TEM) to analyze device structure.
- Investigated voltage-driven formation and modification of silicon (Si) nanocrystals (NCs) within the SiO(x) matrix.
Main Results:
- Demonstrated resistive switching and memory effects using SiO(x) as the active material.
- Observed voltage-driven formation of Si NCs (∼5 nm) within the SiO(x) matrix.
- Achieved high ON/OFF ratios (>10^5), fast switching (<100 ns), and good endurance (10^4 cycles).
Conclusions:
- SiO(x) can function as the active material in advanced electronic devices, enabling metal-free designs.
- The demonstrated properties suggest potential for CMOS-compatible memory and logic applications.
- The formation of Si NCs within SiO(x) is key to the observed resistive switching behavior.
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