Transverse piezoelectric field-effect transistor based on single ZnO nanobelts
1State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, PR China.
Physical Chemistry Chemical Physics : PCCP
|September 8, 2010
Abstract:
A transverse piezoelectric field-effect transistor (TP-FET) based on single ZnO nanobelts has been fabricated on a metallic graphite substrate in an atomic force microscope (AFM). The source-to-drain current of the TP-FET was found to decrease with increasing loading force under a positive bias due to the carrier-trapping effect and the creation of a charge-depletion zone. This TP-FET can be applied as a force/pressure sensor for measuring nanoNewton forces ranged from 0 to 700 nN.
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