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Updated: Jun 8, 2026

Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates

Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates

Published on: June 18, 2013

Parallel array InAs nanowire transistors for mechanically bendable, ultrahigh frequency electronics.

Toshitake Takahashi¹, Kuniharu Takei, Ehsan Adabi

¹Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA.

|September 18, 2010

Summary

This summary is machine-generated.

Flexible indium arsenide (InAs) nanowire transistors achieve gigahertz (GHz) operation for the first time. This breakthrough enables new possibilities for high-frequency electronics on bendable surfaces.

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Area of Science:

Materials Science
Electrical Engineering
Nanotechnology

Background:

Indium arsenide (InAs) nanowires possess high electron mobility, making them promising for high-frequency electronics.
Developing high-performance electronic devices on mechanically flexible substrates remains a significant challenge.

Purpose of the Study:

To characterize the radio frequency (RF) response of InAs nanowire array transistors fabricated on flexible substrates.
To demonstrate gigahertz (GHz) operational capabilities of nanowire arrays for potential flexible electronics applications.

Main Methods:

Fabrication of InAs nanowire array transistors on mechanically flexible substrates.
Characterization of the radio frequency (RF) performance, including maximum frequency of oscillation (fmax) and cutoff frequency (ft).

Main Results:

Demonstrated GHz device operation for InAs nanowire arrays on flexible substrates, a first for such systems.
Achieved a maximum frequency of oscillation (fmax) of approximately 1.8 GHz and a cutoff frequency (ft) of approximately 1 GHz.
Attributed the high-frequency response to the high saturation velocity of electrons in the high-mobility InAs nanowires.

Conclusions:

InAs nanowire array transistors on flexible substrates offer a viable platform for ultrahigh-frequency flexible electronics.
The demonstrated GHz performance opens avenues for advanced high-performance digital and analog circuitry in flexible devices.