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Resist alternatives for sub-0.35-µm lithography by using highly attenuated radiation
Applied Optics
|September 22, 2010
Summary
New photoresist imaging techniques accommodate deep UV to soft x-ray lithography, enhancing wavelength flexibility and improving exposure tolerances for smaller microelectronic devices.
Area of Science:
- Materials Science
- Nanotechnology
- Semiconductor Manufacturing
Background:
- Photoresist absorbance increases significantly at shorter wavelengths (deep UV to soft x-ray).
- Traditional lithography methods face challenges with high absorbance at these wavelengths.
- Scaling down device dimensions to 0.1 µm necessitates advanced lithographic approaches.
Purpose of the Study:
- To explore novel photoresist processes for advanced lithography.
- To address challenges posed by strong resist film absorbance at deep UV and soft x-ray wavelengths.
- To develop imaging techniques offering improved wavelength flexibility and process tolerances.
Main Methods:
- Demonstration of silylation processes as manufacturable near-surface-imaged resists.
- Development of new chemistries for near-surface and at-the-surface imaging.
- Evaluation of these approaches for microelectronic device fabrication.
Main Results:
- Silylation processes are manufacturable for near-surface imaging in deep UV lithography.
- Emerging chemistries enable near-surface and at-the-surface imaging.
- These methods offer enhanced wavelength flexibility and potential for improved exposure and focus tolerances.
Conclusions:
- Novel photoresist imaging strategies are crucial for future lithography.
- Near-surface and at-the-surface imaging techniques provide solutions for high absorbance challenges.
- These advancements are vital for fabricating microelectronic devices at dimensions down to 0.1 µm.
