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Updated: Jun 8, 2026

Chemical Vapor Deposition of an Organic Magnet, Vanadium Tetracyanoethylene
Published on: July 3, 2015
Giant magnetoresistance in organic spin valves
Dali Sun1, Lifeng Yin, Chengjun Sun
1Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.
Abstract:
Interfacial diffusion between magnetic electrodes and organic spacer layers is a serious problem in the organic spintronics which complicates attempts to understand the spin-dependent transport mechanism and hurts the achievement of a desirably high magnetoresistance (MR). We deposit nanodots instead of atoms onto the organic layer using buffer layer assist growth. Spin valves using this method exhibit a sharper interface and a giant MR of up to ∼300%. Analysis of the current-voltage characteristics indicates that the spin-dependent carrier injection correlates with the observed MR.
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