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Related Concept Videos

Bipolar Junction Transistor01:22

Bipolar Junction Transistor

Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational characteristics.
The structure...
BJT Amplifiers01:14

BJT Amplifiers

Bipolar Junction Transistors (BJTs) are pivotal components in amplifier circuits, functioning as voltage-controlled current sources in their active region. This characteristic allows them to efficiently control the collector current through variations in the base-emitter voltage. Essentially, BJTs amplify power due to their ability to take a weak input signal and output a much stronger signal.
In BJT amplifier configurations, particularly in common-emitter setups, the transistor's role extends...
MOSFET Amplifiers01:17

MOSFET Amplifiers

The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
Small-Signal Analysis of BJT Amplifiers01:21

Small-Signal Analysis of BJT Amplifiers

Small signal analysis is a fundamental approach used in electronics to understand how a Bipolar Junction Transistor (BJT) amplifier processes signals. In the active region, the BJT is designed for linear amplification. The transistor's behavior under these conditions is governed by its instantaneous base-emitter voltage VBE, a sum of the DC bias VBE, and a small AC signal VBE, resulting in the collector current iC. Here, the collector current has a DC component and an AC component.
Modes of Operations of BJT01:21

Modes of Operations of BJT

A Bipolar Junction Transistor (BJT) is a versatile component in electronics, functioning in four distinct modes based on the biasing of its junctions: active, saturation, cut-off, and inverted modes.
Active Mode: The most common mode for amplification, the active mode features a forward-biased emitter-base junction and a reverse-biased base-collector junction. This setup enables electrons to be injected from the emitter to the base while blocking the majority carriers at the collector. The...

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Related Experiment Video

Updated: Jun 8, 2026

Fabrication of Magnetic Platforms for Micron-Scale Organization of Interconnected Neurons
09:54

Fabrication of Magnetic Platforms for Micron-Scale Organization of Interconnected Neurons

Published on: July 14, 2021

Magnetoamplification in a bipolar magnetic junction transistor.

N Rangaraju1, J A Peters, B W Wessels

  • 1Materials Research Center, Northwestern University, Evanston, Illinois, USA.

Physical Review Letters
|September 28, 2010
PubMed
Summary

Researchers developed the first bipolar magnetic junction transistor using a dilute magnetic semiconductor. This device exhibits room-temperature magnetoamplification, paving the way for novel spintronic computer architectures.

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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

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Last Updated: Jun 8, 2026

Fabrication of Magnetic Platforms for Micron-Scale Organization of Interconnected Neurons
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09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Area of Science:

  • Spintronics
  • Semiconductor Physics
  • Materials Science

Background:

  • Dilute magnetic semiconductors offer unique electronic and magnetic properties.
  • Bipolar junction transistors are fundamental semiconductor devices.
  • Controlling transistor characteristics with magnetic fields is a key goal in spintronics.

Purpose of the Study:

  • To demonstrate the first bipolar magnetic junction transistor.
  • To investigate magnetoamplification in an all-semiconductor device at room temperature.
  • To explore the potential for spin-based computing.

Main Methods:

  • Fabrication of an InMnAs p-n-p transistor.
  • Characterization of transistor performance under varying magnetic fields.
  • Development of a modified Ebers-Moll model to explain observed phenomena.

Main Results:

  • Successful demonstration of a bipolar magnetic junction transistor.
  • Observation of room-temperature magnetoamplification in the InMnAs transistor.
  • Attribution of magnetoamplification to the magnetoresistance of the InMnAs heterojunction.

Conclusions:

  • The developed transistor utilizes spin-selective conduction for magnetic field control.
  • Magnetoamplification in this device is linked to junction magnetoresistance.
  • This work opens possibilities for new computer logic architectures leveraging carrier spin.