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Updated: Jun 8, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Electron-hole overlap dictates the hole spin relaxation rate in nanocrystal heterostructures
Jun He1, Haizheng Zhong, Gregory D Scholes
1Department of Chemistry, Institute for Optical Sciences, and Centre for Quantum Information and Quantum Control, University of Toronto, 80 St. George Street, Toronto, Ontario M5S 3H6, Canada.
Abstract:
Hole spin relaxation dynamics in CdTe/CdSe core-shell nanocrystals are measured by an ultrafast polarization transient grating technique. Photoexcited charge separation in type II structures suppresses the electron-hole exchange interaction and the hole spin relaxation time constant is found to increase from ∼0.3 ps to ∼10 ps at 293 K as the CdSe shell thickness increases from ∼0.2 nm to ∼2.4 nm. Analysis of these data suggests that spin relaxation in semiconductor nanostructures is tunable between type I and type II localization according to an electron-hole overlap function.
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