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Updated: Jun 8, 2026

Fabrication and Characterization of Thickness Mode Piezoelectric Devices for Atomization and Acoustofluidics
Published on: August 5, 2020
PZT transduction of high-overtone contour-mode resonators
Hengky Chandrahalim1, Sunil A Bhave, Ronald G Polcawich
1School of Electrical and Computer Engineering, Cornell University, Ithaca, NY, USA. hengky.chandrahalim@micro.mavt.ethz.ch
Abstract:
This paper presents the Butterworth-van Dyke model and quantitative comparison that explore the design space of lead zirconate titanate-only (PZT) and PZT on 3-, 5-, and 10-μm single-crystal silicon (SCS) high-overtone width-extensional mode (WEM) resonators with identical lateral dimensions for incorporation into radio frequency microelectromechanical systems (RF MEMS) filters and oscillators. A novel fabrication technique was developed to fabricate the resonators with and without a silicon carrier layer using the same mask set on the same wafer. The air-bridge metal routings were implemented to carry electrical signals while avoiding large capacitances from the bond-pads. We theoretically derived and experimentally measured the correlation of motional impedance (RX), quality factor (Q), and resonance frequency (f) with the resonators' silicon layer thickness (tSi) up to frequencies of operation above 1 GHz.
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